Showing 2 results for Keshavarz Alamdari
A. Salmasi, E. Keshavarz Alamdari,
Volume 31, Issue 2 (Dec 2012)
Abstract
In this paper, preparation and characterization of a-SiNx thin films deposited by LPCVD method from free radicals of TCS and NH3 gaseous system were investigated. These radicals are made by passing each of the precursor gases separately over Pt-Ir/Al2O3 catalyst at the temperature of 600 ᐤC. Kinetics of this process was investigated at different total pressures, NH3/TCS flow rate ratios and temperatures. Surface topography and chemical concentrations were studied by Ellipsometry, XXPS, AFM and ADP. Our analyses of the performed experiments indicated that at the temperatures between 730 ᐤC and 830 ᐤC, the growth rate of thin films follows an Arrhenius behavior with activation energy of 166.3 KJ.mol-1. The measured H2 contamination in a-SiNx thin films is 1.05 at%, which is 17 times lower than the corresponding contamination in the films produced by PECVD and 3.4 times lower than the contamination in the LPCVD thin films with SiH4 or DCS and NH3. The created surface topography of the prepared films is smooth and uniform.
N. Sadeghi , E. Keshavarz Alamdari,
Volume 34, Issue 2 (Journal of Advanced Materials- Summer 2015)
Abstract
In the present study, the copper anode slime was leached in chloride media. Then, pregnant leach solution (PLS) was purified using solvent extraction method and Octanol-kerosene solution. HAuCl4.2L was determined as the extracted macromolecule, and separation of impurities, such as copper, iron and selenium was done in the presence of gold. McCabe-Thiele diagram of Au–HCl (3 M)– Octanol (40% v/v) in O/A=3/4 showed that Au concentration in aqueous phase decreased from the initial value of 200 to 7 mg/L, after 5 stages. Ammonia solution was proposed as the stripper and McCabe-Thiele diagram was presented to obtain the number of gold stripping steps by ammonia solution
