A. Bahari, M. Roodbari Shahmiri , N. Mirnia,
Volume 31, Issue 1 (6-2012)
Abstract
Recently, high – K materials such as Al2O3 and TiO2 films have been studied to replace ultra thin gate silicon dioxide film. In the present work, these films were grown on the top of Si(100) surface at different temperatures and under ultra high vacuum conditions. The obtained results showed that Al2O3 has a structure better than that of TiO2 and thus can be used as a good gate dielectric for future MISFET (Metal – Insulator- Semiconductor- Field – Effect- Transistors) devices.
