Volume 31, Issue 1 (Jun 2012)
2012, 31(1): 51-56 |
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A. Bahari, M. Roodbari Shahmiri, N. Mirnia. Comparison of Nano Structural Properties of Al2O3 and TiO2 Films. Journal of Advanced Materials in Engineering (Esteghlal) 2012; 31 (1) :51-56
URL: http://jame.iut.ac.ir/article-1-536-en.html
URL: http://jame.iut.ac.ir/article-1-536-en.html
Department of Physics, University of Mazandaran, Babolsar , a.bahari@umz.ac.ir
Abstract: (5973 Views)
Recently, high – K materials such as Al2O3 and TiO2 films have been studied to replace ultra thin gate silicon dioxide film. In the present work, these films were grown on the top of Si(100) surface at different temperatures and under ultra high vacuum conditions. The obtained results showed that Al2O3 has a structure better than that of TiO2 and thus can be used as a good gate dielectric for future MISFET (Metal – Insulator- Semiconductor- Field – Effect- Transistors) devices.
Type of Study: Research |
Subject:
General
Received: 2015/02/9 | Accepted: 2015/05/6 | Published: 2015/05/6
Received: 2015/02/9 | Accepted: 2015/05/6 | Published: 2015/05/6
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